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| Data Sheet No.PD60145-K IPS021L FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 150m (max) 50V 5A 1.5s Description The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET(R) POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Package 3 Lead SOT223 Typical Connection Load R in series (if needed) Q D IN control S S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS021L Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness.. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum Input voltage Maximum IN current Diode max. continuous current (1) (rth=125oC/W) Isd pulsed Diode max. pulsed current (1) (1) P d ESD1 ESD2 T stor. Tj max. Min. -- -0.3 -10 -- -- -- -- -- -55 -40 Max. 47 7 +10 1.4 10 1 4 0.5 150 +150 Units V mA Test Conditions A Maximum power dissipation (rth=125oC/W) Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature W C=100pF, R=1500, kV o C=200pF, R=0, L=10H C Thermal Characteristics Symbol Parameter Rth1 Rth2 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Min. -- -- Typ. 100 50 Max. Units Test Conditions -- -- o C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C ( TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Rin Recommended resistor in series with IN pin Tr-in (max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) Vds (max) VIH VIL I ds Min. -- 4 0 -- 0.5 -- 0 Max. 35 6 0.5 1.4 5 1 1 Units V A k S kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes. 2 www.irf.com IPS021L Static Electrical Characteristics Standard footprint 70 m copper thickness. Tj = 25oC, (unless otherwise specified). Symbol Parameter ON state resistance Tj = 25oC Tj = 150oC Idss 1 Drain to source leakage current Idss 2 Drain to source leakage current V clamp 1 Drain to source clamp voltage 1 V clamp 2 Drain to source clamp voltage 2 Vin clamp IN to source clamp voltage Vth IN threshold voltage Iin, -on ON state IN positive current Iin, -off OFF state IN positive current Rds(on) Min. 100 -- 0 0 48 50 7 1 25 50 Typ. 130 220 0.01 0.1 54 56 8 1.5 90 130 Max. Units Test Conditions 150 280 25 50 56 60 9.5 2 200 250 m A Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered V A Switching Electrical Characteristics Vcc = 14V, Resistive Load = 10, Rinput = 50, 100s pulse, Tj = 25oC, (unless otherwise specified). Symbol Parameter Ton Tr Trf Toff Tf Qin Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Min. 0.15 0.4 2 0.8 0.5 -- Typ. Max. Units Test Conditions 0.5 0.9 6 2 1.3 30 1 2 12 3.5 2.5 -- See figure 2 s See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) Min. -- 4 1.5 2 -- Typ. 165 5.5 2.3 10 400 Max. Units Test Conditions -- 7 3 40 -- C A V s J o See fig. 1 See fig. 1 V in = 0V, Tj = 25oC Vcc = 14V www.irf.com 3 IPS021L Functional Block Diagram All values are typical DRAIN 47 V 1000 200 k IN 8.1 V 80 A S R Q Q I sense T > 165c I > Isd SOURCE Lead Assignments (2) D 1 In 2 D 3 S 4 www.irf.com IPS021L Vin 5V 0V Vin 10 % t < T reset I shutdown t > T reset 90 % Tr-in Ids Isd 90 % Ids 10 % Td on tr Td off tf T Tsd (165 c) T shutdown Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L Rem : V load is negative during demagnetization V load + Ids Vds clamp R D 14 V - Vin Vds ( Vcc ) 5v 0v ( see Appl . Notes to evaluate power dissipation ) IN S Vds Ids Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5 IPS021L All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 Tj = 25oC Tj = 150 C o 200% 180% 160% 140% 120% 100% 80% 60% 40% 20% 0% -50 -25 0 25 50 75 100 125 150 175 Figure 5 - Rds ON (m) Vs Input Voltage (V) Figure 6 - Normalised Rds(on) (%) Vs Tj (oC) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 ton de lay ris e tim e 130% rds on 4 toff delay fall tim e 3 2 1 5 6 7 8 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6 www.irf.com IPS021L 100 100 delay on rise tim e 130% rdson 10 10 delay off fall tim e 1 1 0 .1 10 100 1000 10000 0 .1 10 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor () Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor () 8 6 5 6 4 4 3 2 2 Isd 25C 0 0 1 2 3 4 5 Ilim 25C 0 6 7 8 -50 -25 0 25 50 75 100 125 150 1 Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) Figure 12 - I shutdown (A) Vs Temperature (oC) www.irf.com 7 IPS021L 5 4 3 100 1" footprint 55C/W T=25C Std. footprint T=100C Std footprint Current path capability should be above this curve std. footprint 100C/W 10 2 1 0 -50 Load characteristic should be below this curve 1 0 50 100 150 200 Figure 14 - Ids (A) Vs Protection Resp. Time (s) Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) 10 s ingle puls e 100 Hz rth=100C/W dT=25C 1k Hz rth=100C/W dT=25C 100 10 1 1 Single pulse 0 .1 Vbat = 14 V Tjini = T sd all curves for 1 mosfet active 0 .0 1 0.1 0 .0 1 0 .1 1 10 100 Figure 15 - I clamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) 8 www.irf.com IPS021L 200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Iin,on Iin,off 16 14 12 10 8 6 4 2 0 -50 Treset rise tim e fall tim e -25 0 25 50 75 100 125 150 Figure 17 - Input Current (uA) Vs Junction Temperature (oC) Figure 18 - Rise Time, Fall Time and Treset (s) Vs Tj (oC) 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 0 25 50 75 100 125 150 Vds clamp @ Isd Vin clamp @ 10mA Figure 19 -Vin clamp and Vds clamp Vs Tj (oC) www.irf.com 9 IPS021L Case Outline 3-Lead SOT-223 01-6029 01-0022 05 (TO-261AA) 10 www.irf.com IPS021L Tape & Reel - SOT223 01-0028 05 / 01-0008 02 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 www.irf.com 11 |
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